Thermalisation of inhomogeneous quantum scalar fields in 1+1D

Using an improved version of the Hartree approximation, allowing for ensembles of inhomogeneous configurations, we show in a $\lambda \phi^4$ theory, that initially the system thermalises with a Bose-Einstein distribution. For later times and larger couplings we see deviations.Comment: Presented at CAPP 2000, 4 pages including figures, typo's correcte

Modelling of a reverse flow catalytic membrane reactor for the partial oxidation of methane

Gas-To-Liquid (GTL) processes have great potential as alternative to conventional oil and coal processing for the production of liquid fuels. In GTL-processes the partial oxidation of methane (POM) is combined with the Fischer-Tropsch reaction. An important part of the investment costs of a conventional GTL-plant is related to cryogenic air separation. These costs could be substantially reduced by separating air with recently developed oxygen perm-selective perovskite membranes, which operate at similar temperatures as a POM reactor. Integration of these membranes in the POM reactor seems very attractive because oxygen reacts at the membrane surface resulting in a high driving force over the membrane increasing the oxygen permeation

Scalar Field Dynamics: Classical, Quantum and in Between

Using a Hartree ensemble approximation, we investigate the dynamics of the \f^4 model in 1+1 dimensions. We find that the fields initially thermalize with a Bose-Einstein distribution for the fields. Gradually, however, the distribution changes towards classical equipartition. Using suitable initial conditions quantum thermalization is achieved much faster than the onset of this undesirable equipartition. We also show how the numerical efficiency of our method can be significantly improved.Comment: Presented at SEWM 2000, 6 pages including figures, reference correcte

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.Comment: 3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Let

Twin Peaks

The on-shell imaginary part of the retarded selfenergy of massive \vr^4 theory in 1+1 dimensions is logarithmically infrared divergent. This leads to a zero in the spectral function, separating its usual bump into two. The twin peaks interfere in time-dependent correlation functions, which causes oscillating modulations on top of exponential-like decay, while the usual formulas for the decay rate fail. We see similar modulations in our numerical results for a mean field correlator, using a Hartree ensemble approximation.Comment: Presented at SEWM 2000, language correction

Scaling of nano-Schottky-diodes

A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.Comment: 4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and correction